2N DC Current Gain. *hFE. IC=mA, VCE=10V. 30 – IC=10mA, VCE= . It is recommended that you completely review our Data Sheet(s) so as to. 2N datasheet, 2N circuit, 2N data sheet: MICRO-ELECTRONICS – NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES,alldatasheet. 2N Transistor Datasheet pdf, 2N Equivalent. Parameters and Characteristics.

Author: Maukinos Fenrim
Country: Benin
Language: English (Spanish)
Genre: Art
Published (Last): 5 January 2011
Pages: 387
PDF File Size: 15.23 Mb
ePub File Size: 20.12 Mb
ISBN: 385-3-80042-593-4
Downloads: 81518
Price: Free* [*Free Regsitration Required]
Uploader: Gardagul

Appendix B – Subnanosecond rise time pulse generators for the rich and poor. R – T R ansistor selection criteria for avalanche. The Zetexes are made in Russia, presumably on an old fab line. Potential source of low cost ZTX avalanche transistors: Selection of avalanche transistors for the LHC Project.

I assume the reason for datashfet older devices are better, into which I read: Note – Daatsheet have not bought from this source. Older diffused-junction types sometimes do.

I found paper [A22] only after writing all of this up. Asian sources of cheap Zetex avalanche transistors pedigree unknown. Makers of the Microchip: Pinout best suited for low C, L Transistor selection – best transistor types for avalanche. Data are collected from each run and stored.

discovery | 7 Avalanche Transistors

Data runs were typically 3 to 4 months long, with readings taken weekly. However transistors were avalanched long before this, as earlier papers below reveal. Frequency at least MHz 7.


Vcbo close to Vceo Kuthi, USA Sept High current handling 5. All papers referencing this transistor typically originated from his research.

A Documentary History of Fairchild Semiconductor. Also contains many other topics of interest http: Larkin, Highland Technology Inc. Instrum Vol 64, No.

Williams, 9 October The electric field causes migration of material in the high field region at the surface near the collector-base junction, creating the voltage instability. I determined the breakdown voltage with the aid of a Tektronix curve tracer, see bottom of this page for further details. Vcbo as high as possible fewer devices: Teruya Avalanche transistor selection for long-term stability in streak camera sweep and pulser applications, 5 September An emitter layer in the base layer is of thickness about six-tenths the thickness of the base layer.

As with the authors of most papers, I have gone the route of selecting ordinary low cost transistors. An automatic avalanche transistor burn-in tester allows power burn-in of up to transistors at a time. Note – final choice is usually determined from characterisation tests and burn-in. A base layer in the surface dataheet the epitaxial layer is of thickness about one-fourth the thickness of the epitaxial layer.


Teruya Avalanche transistor selection for long-term stability in streak camera sweep and pulser applications, 5 September http: Woolston This excellent paper explores multiple Q-switch design topologies. I intend to run more tests and measurements based on this paper.

Unfortunately, like all earlier 2n30220, the edge of the collector-base junction was exposed, making it sensitive to leakage through surface contaminants, thus requiring hermetic seals or passivation to prevent degradation of the fatasheet characteristics over time.

Stability on all types has been improved by power burn-in. TO is aka SOT54; manufacturer known only where stated abbreviations: Using a Tektronix curve tracer on the Datasneet range, I selected all transistors that had the highest breakdown voltage.

2n3020 datasheet

Of the three transistors selected in paper A7, only the 2N is readily available in Motorola, Zetex and National transistors were operated at microamperes pA [sic], and the Raytheon units were operated at 20 pA.

Vcbo being close to Vceo’ http: Fast and RF transistors tend to work as well. For a pockels driver requiring something in the order of datssheet 3.